Formation of TiO x films produced by high-power pulsed magnetron sputtering

Formation of thin TiO x films produced by pulsed planar magnetron sputtering deposition is reported in this paper. The formation process and layer growth were controlled by (i) the ratio of reactive O 2 in Ar/O 2 working gas mixture and (ii) the pressure in the vacuum chamber. The magnetron, operated in a high-power pulse mode with a low repetition frequency of 250 Hz, reached maxima peak current I p ∼ 50 A and magnetron current density peaks at i p ∼ 1 A cm −2 . Particular spectral lines (Ar = 420.07 nm, Ar + = 487.98 nm, Ti = 518.96 nm) emitted by the discharge were investigated using time-resolved photon counting measurements. The phases of deposited TiO x films were determined by grazing incidence x-ray diffractometry and thickness and density were calculated from x-ray reflectometry measurements; in addition composition and chemical bounds were revealed by x-ray photoelectron spectroscopy. The film diagnostics survey the existence of different crystalline phases in the Ti–O system and their formation. Discharge properties for example, deposition rate and time evolution of discharge current are also discussed.