Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane

We deposited β-SiC thin films and β-SiC nanowires by metalorganic chemical vapor deposition (MOCVD) on bare Si(100) and Ni-coated Si(100) substrates using dichloromethylvinylsilane [CH2CHSi(CH3)Cl2] as a single molecular precursor. Deposition pressures and temperatures were about 50 mTorr and 800–1200 °C, respectively, and deposition durations were 0.5–2 h. Nickel plays an important role as a catalyst in growing β-SiC nanowires. As-deposited zinc-blende SiC thin films and nanowires were grown separately. Initial growth rates are strongly dependent on deposition temperature. TEM analysis showed that the as-deposited β-SiC nanowires are wrapped with very thin amorphous carbon layers, have a [111] growth direction with well-crystallized structure, and modulated diameters. XPS and EDX analyses show that the Si:C compositions are about 1.0:1.2, suggesting possible applications to both field emitters and electronic devices.