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June 19, 2021MicromachinesOpen Access

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

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MDMaksym DubWarsaw University of TechnologyPSPavlo SaiWarsaw University of TechnologyMSM. SakowiczInstitute of High Pressure Physics

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Dub et al. (2021) studied this question.

synapsesocial.com/papers/6a99b3f675d50b594933a3d4https://doi.org/10.3390/mi12060721
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