InGaAs shallow junction fabrication using Langmuir–Blodgett film diffusion source

A new source of cadmium diffusion in In0.53Ga0.47As has been developed. Langmuir–Blodgett (LB) deposited monolayers of cadmium arachidate have been used as a source of cadmium. The LB film has been characterized by grazing incidence infrared spectroscopy and Auger electron spectroscopy. Acceptor profiles obtained by differential Hall technique are presented. Highly doped (NA =2×1019 cm−3) shallow (xj ≊0.1–0.4 μm), p+-n junctions are obtained. Mesa-type p-i-n diodes with 125 μm diameter, ideality factor =1.3, Idark =5 nA at 20 V reverse bias, and Vbreakdown =30 V have been fabricated.