Investigation of Sn-doped GaAs epilayers grown by low pressure metal-organic chemical vapor deposition

Tetraethyltin was used as a source of Sn dopant in homoepitaxial GaAs films grown from triethylgallium and arsine by low pressure metal-organic chemical vapor deposition. Epitaxial crystallinity was examined by using the x-ray back reflection Laue method. The carrier concentration is uniform in the Sn-doped epilayers and the transition region can be controlled to within 0.2 μm. The current-voltage characteristics were also examined. The accumulation of Sn on the surface of the epilayer was observed by Auger electron spectroscopy.