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July 11, 2012Semiconductor Science and TechnologyOpen Access

Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

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HOHiraku OnoderaKHK. Horio

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Onodera et al. (2012) studied this question.

synapsesocial.com/papers/6a99bbae0885b2e474a8619fhttps://doi.org/10.1088/0268-1242/27/8/085016
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