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Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunneling magnetoresistance. A comparative study of the room temperature electron transport and low frequency noise in Fe1−xVx/MgO/Fe and Fe/MgO/Fe1−xVx magnetic tunnel junctions with 0≤x≤0.25 reveals that V doping of the bottom electrode for x<0.1 reduces in nearly two orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.
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Herranz et al. (2010) studied this question.
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