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Electric conduction has been studied vs frequency ω and temperature T in InP layers grown at low temperature. The T and ω behaviors of the conductivity are found to be typical of a hopping process in a partially defect filled band, very similar to the one observed in disordered materials. We have determined the location of the Fermi level. The results are analyzed in terms of a recent theory developed by D. Emin [Phys. Rev. B 46, 9419 (1992)].
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Khirouni et al. (1993) studied this question.
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