We present a self-consistent approach to describe ambipolar tunnelling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunnelling from a near-surface quantum well to surface states. The results of the model compare very well with the behaviour observed in photoluminescence experiments in InGaAs/InP asymmetric double quantum wells and in near-surface AlGaAs/GaAs single quantum wells.
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Presilla et al. (1995) studied this question.
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