Electrostatics of two-dimensional lateral junctions

The increasing technological control of two-dimensional (2D) materials has allowed the demonstration of 2D lateral junctions exhibiting unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic devices. Notably, the chemically doped MoS 2 homojunction, the WSe 2 -MoS 2 monolayer and MoS 2 monolayer/multilayer heterojunctions, have been demonstrated. Here we report the investigation of 2D lateral junction electrostatics, which differs from the bulk case because of the weaker screening, producing a much longer transition region between the space-charge region and the quasi-neutral region, making inappropriate the use of the complete-depletion region approximation. For such a purpose we have developed a method based on the conformal mapping technique to solve the 2D electrostatics, widely applicable to every kind of junctions, giving accurate results for even large asymmetric charge distribution scenarios.