Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 1999physica status solidi (a)

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

View Full Paper
Ask AI
Bookmark
Share

Authors

RDR. DietrichUniversity of WürzburgAVAndrei VescanErnst Ruska CentreAWA. WiesztDaimler (Germany)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Dietrich et al. (1999) studied this question.

synapsesocial.com/papers/6a99d29a0c3d7640c6fdffd2https://doi.org/10.1002/(sici)1521-396x(199911)176:1<209::aid-pssa209>3.0.co;2-q
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Persistent photoconductivity in n-type GaN1997 · 182 citations
  2. 2Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy1998 · 107 citations
  3. 3Persistent photoconductivity in n-type GaN1997 · 127 citations
  4. 4Deep levels and persistent photoconductivity in GaN thin films1997 · 227 citations
  5. 5The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN1998 · 113 citations