28 ps recovery time in an InGaAsP/InGaAsP multiple-quantum-well saturable absorber employing carrier sweepout

We describe fast recovery at a wavelength of 1550 nm in a multiple-quantum-well (MQW) saturable absorber with InGaAsP quaternary wells and barriers using electric-field-induced carrier sweepout. The MQW SA is integrated with a distributed Bragg reflector in a p-type–intrinsic–n-type structure. Pump–probe measurements show that the recovery time can be reduced from >900 to 28 ps by application of a 151 kV/cm sweepout field. We measure the dependence of the recovery time on the energy of the saturating pulse and explain our results in terms of carrier dynamics in the sweepout field.