Frequency quenching of microwave-induced resistance oscillations in a high-mobility two-dimensional electron gas

This is the authors' abstract. We don't add key points for this paper.

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs∕AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 1200.3em0exGHz, MIROs start to quench, while above 2300.3em0exGHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.