Ga0.5In0.5P/GaAs heterojunction films were grown using a valved, three-zone phosphorus source and valved arsenic source. The design of the phosphorus source eliminates the flux bursts experienced upon valve opening with two-zone furnaces. Narrow x-ray linewidths with Pendellosung interference oscillations were observed in double crystal measurements. Chemically abrupt As/P and P/As interfaces were obtained using both valved sources. The optical band gap determined from photoluminescence was consistent with minimal ordering in the films. GaInP films were doped with silicon in the 1017 cm−3 range with good mobilities and negligible carrier freeze-out upon cooling. A GaInP(emitter)/GaAs(5×1019 cm−3 carbon doped base) heterojunction bipolar transistor exhibited a current gain of 30.
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Hoke et al. (1995) studied this question.