Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 µm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 µm-wide 1600 µm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.
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Salhi et al. (2004) studied this question.
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