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Metal-ferroelectric-insulator-semiconductor capacitors with Pb(Zr0.53,Ti0.47)O3 (PZT) ferroelectric layer and dysprosium oxide (Dy2O3) insulator layer were fabricated and characterized. The measured memory window of 0.86V was close to the theoretical value ΔW≈2dfEc≈0.78V at a sweep voltage of 8V. The size of the memory window as a function of PZT film thickness was discussed. The C-V flatband voltage shift (ΔVFB) as function of charge injection was also studied. An energy band diagram of the Al∕PZT∕Dy2O3∕p-Si system was proposed to explain the memory window and flatband voltage shift. The charge injection is mainly due to electrons.
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Chang et al. (2006) studied this question.
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