We report the experimental results of noise measurements performed on junction field effect transistors (2SK162) in the frequency range 1–100 kHz, where the internal correlation effects are not negligible. The experimental data have been analyzed to determine the input current noise spectrum and the spectral energy sensitivity of the device, expressed in terms of noise temperature. We obtained Vn≂0.6 nV/√Hz, and In≂4 fA/ √Hz at 1 kHz, In≂25 fA/ √Hz at 100 kHz. We also report and discuss the results of measurements performed at the temperature of 200 K, which show that the reduction of the noise is not very significant for this specific device.
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Pallottino et al. (1994) studied this question.
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