Temperature-Compensated Devices Using ThinhboxTeO₂Layer With Negative TCD

This letter evaluates the applicability of TeO2thin films as an attractive alternative over conventional SiO2layers in the field of temperature compensation of various devices. It is reported that the processing environment during TeO2growth plays an important role in defining its negative temperature coefficient of delay (TCD), and the magnitude of TCD increases continuously from -1.862times103ppmmiddotdegC-1to -9.883times103ppmmiddotdegC-1with an increase in the oxygen percentage from 25% to 100% in the processing gas mixture. A very low thickness of 0.008lambda for the TeO2over layer (in comparison to the 0.32lambda-thick SiO2layer) is required for achieving a zero-TCD device without degrading its performance