Silicon carbide nanowires: chemical characterization and morphology investigations

Silicon carbide nanowires (SiCNWs) were efficiently obtained via self‐combustion high‐temperature synthesis (SHS) route from silicon‐bearing/poly(tetrafluoroethylene) (PTFE) mixtures. The SEM and AFM studies were carried out to find out the lengths and diameters of the nanowires (20‐100 nm dia. and several microns in length). XPS was used to investigate the chemical composition of the nanowires. These studies showed that the SiCNWs are N‐doped. The ARXPS results revealed that outer regions of the nanowires are C‐rich. These results along with a low resistance of the nanowires suggest that nitrogen dopant and the carbon rich surface are responsible for good conducting properties of SiCNWs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)