In this paper, multicolor ITO/SiOx/p-Si/Al light emitting diodes (LEDs) made by Si quantum dot (Si-QD) embedded Si-rich SiOxgrown by detuning the radio frequency (RF) plasma power under the plasma-enhanced chemical vapor deposition system are presented. With the Si-QD size shrinkage obtained by increasing the RF plasma powers from 30 to 70 W, the turn-on voltage of red, green, and blue ITO/SiOx/p-Si/Al LEDs is found to increase from 70 to 99 V, with the maximum electroluminescent power increasing from 9 to 423 nW.
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Lai et al. (2011) studied this question.
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