Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175–250 °C), the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed.
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Němec et al. (2001) studied this question.
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