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Surface electrons were selectively photoexcited into the normally unoccupied antibonding surface state on the cleaved Si(111) (2×{}1) surface by 2.8-{μ} m infrared laser radiation. The time decay of the antibonding-state population was then followed in real time by picosecond time-resolved uv photoemission spectroscopy. The relaxation dynamics was found to be cleavage dependent, and appears to be controlled by defects, which give rise to a unique signature in the photoemission spectra.
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Bokor et al. (1986) studied this question.
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