We have imaged with the tunneling microscope the microscopic surface topography of germanium layers grown by molecular-beam epitaxy on Si(111)-7×{}7. The surface structures corresponding to Ge(111)-c2×8 and Ge(111)-7×{}7 are resolved. The Ge-c2×8 structure is shown to consist of a coherent combination of two simpler units both of which exist independently on the surface. The associated phase boundaries are illustrated. The Ge 7×{}7 structure is shown to be similar to that obtained for Si(111). Defects in the cell are also imaged.
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Becker et al. (1985) studied this question.
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