TFT and Physical Properties of Poly-Crystalline Silicon Prepared by Very Low Pressure Chemical Vapour Deposition (VLPCVD)

This paper investigates the role of silane partial pressure (P SiH 4) in VLPCVD on the as-deposited poly-Si film quality. The film quality strongly depends on the P SiH 4 when deposition temperature is kept constant. Higher pressure and excessively lower pressure have been found to be not adequate for thin film transistors (TFTs). By optimizing the deposition conditions, excellent TFTs can be fabricated through a low temperature process without relying on any other special processes. This paper also suggests the possibility of further improvement of as-deposited poly-Si films.