Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field

A low energy broad ion beam doping technique has been developed. This technique enables the doping of impurities into semiconductor materials over a large area (370 mm φ) without mass separation and beam scanning. Diborane diluted in hydrogen was discharged by rf (13.56 MHz) power and magnetic fields. Ions from discharged gas were accelerated by an acceleration voltage of 1.5 kV and were implanted into silicon wafers. We confirmed that resistance uniformity in five pieces of 3in.-Si wafers simultaneously doped by this technique was ±3.44 percent.