Growth of Microcrystalline SixGe1-x Alloy Films by Sputter-Assisted-Plasma CVD

Microcrystalline Si x Ge1-x alloys are prepared at low substrate temperatures by the sputter-assisted-plasma CVD technique. The composition is widely controlled by changing the substrate temperature between 40 and 420°C. Microcrystalline nature is confirmed by Raman scattering spectroscopy showing the definite peaks of Si-Si, Si-Ge, and Ge-Ge lines, and by X-ray diffraction patterns. The grain size of the microcrystal is estimated to be 150–200 A.