Tail-state distribution and extended-state mobility in a-Si:H

Time-of-flight experiments on amorphous semiconductors, in which carrier transport proceeds via multiple trapping in and release from a continuous distribution of localized states below a mobility edge, have been analysed using a new simulation technique. Several distributions are considered and the results compared with data on the temperature dependence of the electron drift mobility in a-Si:H. Conclusions are reached concerning the tail-state distribution and the magnitude of the extended-state mobility in this material.