We report the preparation of thin films of gallium phosphide and gallium nitride by deposition from low-pressure rf-excited plasmas in mixtures of trimethylgallium with ammonia and phosphine, respectively. With the deposition conditions used, the gallium phosphide is found to be amorphous, while the gallium nitride is polycrystalline. We present preliminary measurements of optical and electrical properties.
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Knights et al. (1978) studied this question.
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