An apparatus has been built for the application of high uniaxial compressive stress to semiconductors. The equipment uses a piston-and-cylinder design operated by air pressure and the force is applied in a completely axial way, thus avoiding shear stresses. A high degree of control of the rate of application of the stress may be obtained and the magnitude of the stress can easily be monitored by means of a manometer. The apparatus has been successfully used to 1.5 GPa for electrical measurements on Si and GaAs.
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Adams et al. (1980) studied this question.
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