The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is investigated. An analytical description based on simple concepts for a complex geometry shows good agreement with the experimental results and enables the determination of quantum well thickness variations in optical waveguide structures. The growth rate reduction (or: ratio of growth rates) r(u) in the middle of the channel increases as the width-to-height ratio of the mask opening is increased.
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Vlamynck et al. (1991) studied this question.
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