Large Area Exposure in Synchrotron Radiation Lithography Utilizing the Steering of the Electron Beam in the Storage Ring

It is demonstrated that the vertical (normal to the plane of electron orbit) width of exposed region in synchrotron radiation lithography can be expanded by a factor of more than three by steering the electron beam in the storage ring with a horizontal magnetic field, without losing intensity and homogeneity. The vertical distribution of the developed thickness in the resist and its vertical shift with the steering magnetic field are evaluated. The perturbation in the electron orbit is also estimated from the shifts of soft X-rays and visible illuminated regions.