A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb2O5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb2O5/Pt, Nb/Nb2O5/Au, Nb/Nb2O5/Ag and Nb/Nb2O5/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb2O5/Pt are 1500 and 4 at 0.5 V, respectively.
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Periasamy et al. (2011) studied this question.
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