New Structural Systematics in the II–VI, III–V, and Group‐IV Semiconductors at High Pressure

A systematic study of the II‐VI, II‐V, and group‐IV semiconductors using angle‐dispersive diffraction techniques is revealing new structures and transitions that significantly modify the accepted structural systematics of these materials. Recent new results from Ge, ZnSe, InSb, and GaAs extend the range of some aspects already indicated by our previous work, and new intermediate phases have been found in InSb, and in HgSe and HgTe.