Peak Mobility of Silicon Metal-Oxide-Semiconductor Systems

The density dependence of the mobility of Si(100) inversion layers is calculated within a multiple-scattering theory. Two scattering mechanisms are included. Because of surface-roughness scattering and charged-impurity scattering, a peak mobility μₘ is found at a characteristic electron density nₘ. The inclusion of a mobility edge for low electron densities sharpens the peak structure drastically in comparison with the linear scattering theory. The comparison of calculated mobilities with experimental results gives good agreement in the full measured density range.