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We study the temperature dependent Hall resistance RH of a new magnetoelectronic device consisting of a micron scale Hall cross which is subjected to the fringe field of a ferromagnetic film with in-plane magnetization, placed on top of it. External application of a weak in plane magnetic field yields reversing of the magnetization and consequently modulates RH. Starting from the continuity equation, we calculate numerically the steady state electrical potential and current distributions in the Hall device and show that the temperature dependency can be well understood in the diffusive regime. We make a detailed investigation of the influence of different parameters on the output of this device.
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Reijniers et al. (2000) studied this question.
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