We experimentally demonstrate a novel depletion-IMOS (DIMOS) device with a 12.1-mV/dec subthreshold slope and 5-decade ON/OFF ratio, employing a depletion mode of operation instead of inversion. DIMOS structure improves reliability by reducing hot carrier injection and features 40% lower breakdown voltages with higher ON currents compared to conventional IMOS.
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Onal et al. (2008) studied this question.
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