Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

We have investigated Sn precipitation and strain relaxation behaviors in the growth of Ge1−xSnx layers on virtual Ge substrates (v-Ge) for strain engineering of Ge. By varying misfit strain at Ge1−xSnx∕v-Ge and Ge1−ySny∕Ge1−xSnx interfaces, we found that a critical misfit strain controls the onset of Sn precipitation at a given thickness of the Ge1−xSnx layer. A compositionally step-graded method, in which the critical misfit strain is taken into account, was applied to the growth of strain-relaxed Ge1−xSnx layers on v-Ge. Postdeposition annealing at each growth step led to lateral propagation of threading dislocations preexisting in the layer and originating from v-Ge, which resulted in high degree of strain relaxation. An epitaxial Ge layer was grown on the strain-relaxed Ge1−xSnx layer and an in-plane tensile strain of 0.68% was achieved.