Fringing-induced barrier lowering (FIBL) effect on nanoscale MOSFET is comprehensively examined. It is observed that by combining stack gate dielectric, conductive spacer, short sidewall spacer, and minimum gate/drain (G/D) overlap, the I/sub off/ with a dielectric constant of (k) 100 is only 1.6 times higher than that with k=3.9 when the gate length is 25 nm. The fully depleted silicon-on-insulator device shows even better FIBL immunity. It is concluded that although the FIBL effect can not be eliminated, it would not an issue beyond the 45-nm technology node.
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Tsui et al. (2004) studied this question.
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