Atomic Layer Deposition of High Dielectric Constant Nanolaminates

Thin stacks comprised of alternating layers of and were investigated as high-permittivity insulators for possible gate dielectric applications. These thin layers were deposited on silicon substrates using atomic layer deposition. Nanolaminates with silicon oxide equivalent thickness of about 2 nm had dielectric constants of around ten and leakage current densities at 1 MV/cm of around Of the three kinds of nanolaminates investigated, structures showed the highest breakdown field and the lowest leakage current.