GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 µm

A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at a wavelength of 1.3 µm with the full width at half maximum of 4 nm has been demonstrated. The GaInNAs RCE-PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100 µm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.