Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

In this work, a postgate CF4 plasma treatment has been demonstrated on In0.53Ga0.47As channel metal-oxide-semiconductor field-effect transistors. Fluorine (F) has been incorporated into the atomic layer deposited Al2O3 gate dielectric by postgate CF4 plasma treatment. A smaller subthreshold swing and reduced interface trap density has been achieved with F passivation, suggesting a better interface quality. With CF4 plasma treatment, drive current, transconductance and effective channel mobility has been shown to increase by 13.9%, 12.5%, and 29.6%, in comparison to the control devices, respectively.