Absence of core-exciton-induced resonant photoemission from InP(110)

Photoemission spectroscopy, constant-final-state spectroscopy, and constant-initial-state spectroscopy techniques have been applied to study the behavior of the valence-band photoemission spectra at the threshold of the excitation of P $2p$ core excitons. Contrary to recent reports for Si and black phosphorus no resonant enhancement of the photoemission cross section has been found. Changes in the spectra can be fully accounted for by taking into consideration the P L2,3 VV Auger electrons. Our data strongly support conclusions drawn recently by R. A. Riedel, M. Turowski, G. Margaritondo, and P. Perfetti [Phys. Rev. Lett. 52, 1568 (1984)] for the behavior of the Si valence-band ionization cross section over the Si $2p$ core-hole threshold and show possible reasons for misinterpretation of the data in the works of others.