Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs with an InP Capping Layer for Performance Enhancement

We report the first demonstration of InP-capped channel n-metal-oxide-semiconductor field-effect transistors (MOSFETs) using a self-aligned gate-first process. MOSFETs with the gate length down to were fabricated, and the dependence of device performance on the InP thickness (2 and ) was investigated. InP capping leads to a significant reduction in the subthreshold swing . Transconductance and saturation drain current are enhanced in n-MOSFETs with the InP-capped channel as compared with those without InP capping, indicating an increased electron mobility in the channel due to the InP capping.