Phosphorus coimplantation effects on optimum annealing temperature in Si-implanted GaAs

Phosphorus (P) coimplantation raises the optimum annealing temperature, providing maximum sheet carrier concentration in Si-implanted GaAs active layers. 3×1013 cm−2 coimplanted P raises the optimum annealing temperature for channel layers from 920 to 990 °C, the same temperature for contact layers. Photoluminescence measurement reveals that this is due to suppression of GaAs and SiAs acceptor generations up to about 1000 °C by P coimplantation. These features indicate that P coimplantation helps to achieve GaAs integrated circuits with high performance.