Electrical uniformity for Si-implanted layer of completely dislocation-free and striation-free GaAs

Electrical uniformity for Si-implanted layer of In-doped GaAs completely free from dislocations and striations is evaluated here using small Hall chips with 400-μm spacing. Sheet carrier concentration, which determines threshold voltages of field-effect transistors, is quite uniform across the wafer, and its standard deviation decreases to 1/5 of that for the conventional liquid-encapsulated Czochralski-grown GaAs. Hall mobility is not degraded despite a high concentration (5–10×1019 atoms cm−3) of indium. These results are promising for realizing substrates of high-performance GaAs large-scale integrated circuits.