A physically based correction for the impact of gate leakage current on the extraction of the effective mobility in MOSFETs has been derived that allows accurate determination of the mobility even when the gate leakage becomes significant. Experimentally, this correction has been applied to MOSFETs with both thin silicon dioxide and high-k gate dielectric, and the efficacy of the correction has been demonstrated for gate leakage up to 10 A/cm/sup 2/.
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Zeitzoff et al. (2003) studied this question.
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