Chemical vapor deposition of CoGa and PtGa2 thin films from mixed-metalorganometallic compounds

A new process for deposition of thin metal films from organometallic precursors of limited volatility has been demonstrated. Short path vapor transport of the complexes dichloro(tetracarbonylcobalt)gallium(III) tetrahydrofuranate, (CO)4CoGaCl2(THF), or platinum(bis-dimethylglyoximato)(bis-dimethylgallium), Pt{(N2C2(CH3)2O2)(GaMe2)}2, each under a stream of hydrogen, leads to the films of the intermetallic compounds CoGa and PtGa2, respectively, on substrates such as Si (100) wafer or a glass slide at 500 °C. The compounds were identified and characterized by x-ray diffraction, Auger electron and x-ray photoelectron spectroscopies. The films are crystalline and highly reflective. The CoGa film is single phased; the PtGa2 film shows a minor constituent of Pt2Ga3.