Positive and negative photosensitive polyimides developable with basic aqueous solutions are reported. The results consist of poly amic acids and naphthoquinone diazides in which sulfonate groups have to be substituted at 4‐position. It depends on the naphthoquinone structures whether positive or negative patterns are obtained. In order to fabricate resist patterns, High‐Temperature‐Post‐Exposure‐Process (HIT‐PEB) must be utilized. The reaction mechanisms are also discussed.
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Takano et al. (1992) studied this question.