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The switching dynamics of magnetic tunnel junctions has been studied by means of time resolved magneto-optic Kerr magnetometry. Magnetic field pulses as short as 250 ps are found to be sufficiently long to switch the storage content of the element. In order to test the write endurance the magnetization of one single element has been reversed 1011 times. Shortly after the initialization of the hard magnetic layer the magnetization reversal process of the soft magnetic layer remains unchanged, indicating that no further degradation of the pinned layer comes into effect.
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Bauer et al. (2002) studied this question.
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