Highly oriented diamond films with {001} facets were grown on Si{001} using microwave plasma enhanced chemical vapor deposition. The tilt and rotation of the diamond crystals were measured by polar x-ray diffraction. The full widths at half-maximum of {004} and {220} diffraction peaks were 5° and 10°, respectively. It was found that the {220} diffraction poles split into two peaks by approximately 5°. This result indicated that there were two possible azimuthal rotations about the surface normal of the substrate for the epitaxially nucleated diamond grains.
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Tachibana et al. (1996) studied this question.